论文部分内容阅读
氮化铝薄膜具有高折射率,良好的化学稳定性,耐磨摩、高电阻等特性在微电子器件和光学薄膜中有着广泛地应用.本文研究了反应式磁控溅射方法利用Ar/N2混合气体镀制氮化铝薄膜的工艺过程,实验表明在高真空和高泵浦速率条件下,放电电压直接依赖于反应气体珠浓度.薄膜的折射率,消光系数和薄膜硬度都依赖于氮气浓度的比例.通过工艺研究,找到了氮气在不同浓度下对氮化铝薄膜的折射率,消光系数以及薄膜硬度的影响,找出了镀制氮化镀制氮化铝薄膜的最佳工艺参数.在Ar/N2工作气体中氮气含量保持在40%条件下,用反应式磁控溅射方法,可以精确镀制出良好的氮化铝薄膜,其中折射率范围在2.25~2.4之间,消光系数为10-3,薄膜显微硬度大于20GPa.该薄膜可以广泛应用于微电子器件和光电器件上.
Aluminum nitride films have high refractive index, good chemical stability, wear resistance, high resistance and other characteristics in microelectronic devices and optical films have been widely used.In this paper, reactive magnetron sputtering method using Ar / N2 The experimental results show that the discharge voltage is directly dependent on the bead concentration of the reaction gas under high vacuum and high pumping rate.The refractive index, extinction coefficient and hardness of the films depend on the concentration of nitrogen The influence of nitrogen on the refractive index, extinction coefficient and film hardness of aluminum nitride film was found through the process research, and the best process parameters of aluminum nitride film was obtained. In the Ar / N2 working gas nitrogen content is maintained at 40% conditions, by reactive magnetron sputtering method, you can accurately plate a good aluminum nitride film, in which the refractive index range between 2.25 to 2.4, the extinction coefficient 10-3, the film microhardness is greater than 20GPa. The film can be widely used in microelectronic devices and optoelectronic devices.