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在生产中引入高介电常数绝缘材料/金属栅电极结构,需要采用全新的制造技术,前驱物和输运系统推动了铪基材料栅极绝缘层的应用。ALD技术也促进了新一代栅电极材料的推广和应用。
The introduction of high dielectric constant insulator / metal gate structures in production requires the use of new manufacturing techniques, precursors and transport systems to promote the use of hafnium-based gate insulating layers. ALD technology has also promoted the promotion and application of a new generation of gate electrode materials.