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为了适应超大规模集成电路Si太阳电池和超导的需要,作者用■ES和I-V特性研究了N~+离子轰击对Si衬底上Nb,M0或Ti溥膜的深度分布和电学性质的影响。
In order to meet the needs of Si solar cells and superconductors in VLSI applications, the authors studied the effect of N + ion bombardment on the depth distribution and electrical properties of Nb, Mo or Ti films on Si substrates using the ES and I-V characteristics.