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化学汽相淀积(CVD)是最近开始普遍用于集成制造工艺并向实用化急速发展的一门技术。但是还有与化学汽相淀积相类似的物理汽相淀积(PVD),物理汽相淀积可以看作是蒸发、溅射等与化学反应无关的技术。如所周知,化学汽相淀积的基本想法是把包含欲生长物质的元素的气体与携带气体一同通入系统,在衬底上经过热解、氧化、还原等化学反应,析出所要生长的物质。目前,CVD技术包括外延生长技术,正以生成氧化膜,氮化膜,金属薄膜等多种形式被广泛采用,它的重要性,应该看作与其他组合工艺占同等地位。估计CVD将来的发展技术是配合离子注入等技术,把它的应用范围扩大到集成工艺之外。本文就CVD设备的考虑方面、现状、以及CVD技术将来的方向等问题作一介绍,其中的硅外延技术因有另文介绍故省略。
Chemical vapor deposition (CVD) is a technology that has recently started to be widely used in integrated manufacturing processes and has been rapidly developed for practical use. However, there is physical vapor deposition (PVD) similar to chemical vapor deposition. Physical vapor deposition can be regarded as a technique that is irrelevant to chemical reactions such as evaporation and sputtering. As is well-known, the basic idea of chemical vapor deposition is that a gas containing an element to be grown is introduced into a system together with a carrier gas, and then subjected to a chemical reaction such as pyrolysis, oxidation and reduction on a substrate to precipitate a substance to be grown . Currently, CVD techniques, including epitaxial growth techniques, are being widely adopted in a variety of forms such as oxide films, nitride films, metal films and the like, and its importance should be considered as being equivalent to other composite processes. It is estimated that the future development of CVD technology is to cooperate with ion implantation technology and extend its application beyond the integrated technology. In this paper, the consideration of CVD equipment, the status quo, as well as the future direction of CVD technology and other issues made an introduction, including silicon epitaxial technology due to another introduction so omitted.