Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

• 作 者: 李密锋 倪海桥 丁颖 Bajek David Kong Liang Cataluna Maria Ana 牛智川
• 机 构: State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academ
• 出 处: Chinese Physics B
• 发表日期: 2014年02期
• 关键词: locked repetition systematically fabrication compromise lifetime assembled areal

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters,using a one-step interruption method after island formation.The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition,growth temperature and arsenic pressure.The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 C,with a deposition rate of 0.02 ML/s,under an arsenic pressure of 1×10 6Torr(1 Torr=1.33322×102Pa),provides the best compromise between high density and the photoluminescence of quantum dot structure,with a radiative lifetime of 780 ps.The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm.Picosecond pulse generation is achieved from a two-section laser,with a~19.7-GHz repetition rate.

The self-assembled growth of InAs / GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on are quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the combination of a growth temperature of 490 C, with a deposition rate of 0.02 ML / s, under an arsenic pressure of 1 × 10 6 Torr (1 Torr = 1.33322 × 102 Pa) provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps.The applicability of this 5-layer quantum dot structure to high-repetition- rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs / GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picoseco nd pulse generation is achieved from a two-section laser, with a ~ 19.7-GHz repetition rate.