快速热工艺氧化法生长超薄SiO_2层的研究

• 作 者: 黄宜平 C.A.Paz de Araujo
• 机 构: 复旦大学电子工程系,美国科罗拉多大学电机系 上海
• 出 处: 半导体学报
• 发表日期: 1989年04期
• 关键词: 氧化 工艺系统 激活能 生长动力学 SiO_2 弧光灯 氧化时间 氧化温度 线性生长 热氧化

在卤素钨灯和弧光灯二种不同辐射热源的快速热工艺系统中用快速热工艺氧化法制备了超薄(20埃-400埃)的SiO_2薄膜.对快速热工艺氧化的生长动力学进行了研究并计算了氧化生长速率的温度激活能.对二种不同快速热工艺系统所得结果作了比较.本文还讨论了快速热工艺氧化中,温度骤变过程的氧化效应.最后,本文提出了“温度骤变(Temperature Ramp-only)快速热氧化”技术,该技术特别适于制备20埃到60埃的超薄SiO_2层.

The ultrathin (20-400 angstroms) SiO_2 thin films were prepared by the rapid thermal oxidation process in a rapid thermal process system using two different radiant heat sources, halogen tungsten lamp and arc lamp. The growth kinetics of rapid thermal oxidation The temperature activation energy of the oxidation growth rate was studied and calculated.The results of two different rapid thermal processing systems were compared.The oxidation effect of the rapid thermal oxidation process in the rapid thermal oxidation process was also discussed.Finally, Temperature Ramp-only Rapid Thermal Oxidation "technology, which is particularly suitable for the preparation of ultra-thin SiO 2 layers from 20 angstroms to 60 angstroms.