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The hysteresis loop changes of ferroelecric SrBi2Ti2O9 (SBT) thin films (330nm) vs the temperature of forming gas (5% hydrogen+95% nitrogen) annealing were measured when the annealing time was 1min and 10min. The selected annealing temperature was at 100℃, 200℃, 250℃, 300℃, 350℃, 400℃ and 450℃, respectively. Our results showed that the ferroelectric properties were easily destroyed and the leakage current changed abruptly when the SBT thin films were in their ferroelectric phase (<270℃). The space charges at the grain boundary may take an important role in absorption polarity molecular hydrogen when the SBT thin films were in the ferroelectric phase. The oxygen recovery experiments were also performed and investigated in this work.
The hysteresis loop changes of ferroelecric SrBi2Ti2O9 (SBT) thin films (330nm) vs the temperature of forming gas (5% hydrogen + 95% nitrogen) were measured when the annealing time was 1min and 10min. , 200 ° C, 250 ° C, 300 ° C, 350 ° C, 400 ° C and 450 ° C, respectively. Our results showed that the ferroelectric properties were easily destroyed and the leakage current changed abruptly when the SBT thin films were in their ferroelectric phase (<270 The space charges at the grain boundary may take an important role in absorption polarity molecular hydrogen when the SBT thin films were in the ferroelectric phase. The oxygen recovery experiments were also performed and investigated in this work.