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采用热CVD方法直接在平面硅基底上成功地制备出定向碳纳米管薄膜。在反应中,镍过渡金属作为催化剂,碳氢化合物乙炔作为碳源,研究了催化剂薄膜厚度对高温氨气预处理后单晶硅衬底上沉积的催化剂镍膜的纳米结构形貌和所生长的定向碳纳米管薄膜等的影响规律。通过扫描电子显微镜(SEM)观察表明,高温刻蚀后,纳米镍颗粒的平均直径一定程度上取决于薄膜的原始厚度,且颗粒密度也取决于薄膜原始厚度,由于氨气的介入,厚为5～10 nm的镍催化剂薄膜具有高的颗粒数密度;碳纳米管的直径随催化剂薄膜厚度单调增大,而其长度随催化剂厚度的增加先增加后减少,且其定向程度随催化剂厚度的增加是先增强后减弱。
Directional carbon nanotube films were successfully fabricated directly on planar silicon substrates by thermal CVD. In the reaction, nickel transition metal as a catalyst and hydrocarbon acetylene as a carbon source, the catalyst film thickness on the single crystal silicon substrate after the pretreatment of high temperature ammonia deposited nickel film nanostructures morphology and growth of Oriented carbon nanotubes and other films. Scanning electron microscopy (SEM) observation showed that the average diameter of nano-nickel particles after high-temperature etching depends to some extent on the original film thickness, and the particle density also depends on the original film thickness, due to the involvement of ammonia, the thickness of 5 The diameter of ~ 10 nm Ni catalyst film has a high number density of particles. The diameter of carbon nanotubes monotonically increases with the thickness of the catalyst film, while the length of CNTs increases first and then decreases with the increase of catalyst thickness, and its orientation increases with the increase of catalyst thickness First increase and then weaken.