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美国Group4LabsLLC公司开发出他们声称是世界上的首片金刚石上GaN半导体晶片。这块金刚石上GaN晶片研制了三年,晶片与合成金刚石衬底之间的间隙不到0.5nm。这种晶片对于高功率及高频电子应用、固体白光照明、光电子和军事应用来说具有高温回弹能力。其军事用途是雷达用微波、毫
Group4Labs LLC of the United States has developed what they claim to be the world’s first diamond-on-GaN semiconductor wafer. The diamond on GaN wafer was developed for three years and the gap between the wafer and the synthetic diamond substrate was less than 0.5 nm. Such wafers have high temperature resilience for high power and high frequency electronic applications, solid white light illumination, optoelectronics and military applications. Its military use is radar with microwaves