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日本Sumitomo电产业研制了一种由InAs分子层交替生长成的超晶格材料.由于InAs与GaAs的晶格尺寸不同,使它们有机地生长在一起匀称地形成层不是一件容易的事.Sumitomo研制成的这种新型材料以0.4mm厚的InP为衬底,一层一个分子厚长度的
Japan’s Sumitomo electric industry has developed a kind of superlattice material alternately grown by the InAs molecular layer due to different crystal lattice size of InAs and GaAs to make them grow organically together to form a layer symmetrically is not an easy task.Sumitomo Developed this new material to InP 0.4mm thick substrate, a layer of a layer of molecular length