论文部分内容阅读
一、三氯氢硅和四氯化硅中痕量杂质的化学光谱测定(水解法)一、方法要点:三氯氢硅和四氯化硅需先经过水解,然后用氢氟酸除去基体硅。其中含有的杂质富集在残渣中,以溶液残渣法进行光谱测定。本方法可测十二个杂质元素。绝对灵敏度为2×10~(-8)克。当三氯氢硅取样1毫升时,方法相对灵敏度:
First, the trichlorosilane and silicon tetrachloride trace impurities in the chemical spectra (hydrolysis) First, the method points: trichlorosilane and silicon tetrachloride to be subjected to hydrolysis, and then remove the substrate with hydrofluoric acid silicon . The impurities contained therein are enriched in the residue and spectroscopically determined by the solution residue method. This method can measure twelve impurity elements. Absolute sensitivity of 2 × 10 ~ (-8) grams. When trichlorosilane sample 1 ml, the relative sensitivity of the method: