论文部分内容阅读
美国国际商业机器公司(IBM)使用电荷耦合器件(CCD)首先制成了半导体存储器系统,从而使CCD工艺从实验室进入实用阶段。据介绍,这个系统为一个5760位缓冲存储器,分六片,每片由串联的双480位移位寄存器组成。每个移位寄存器由10个CCD通道组成,每48位接一个场效应晶体管刷新放大器。6个移位寄存器串联组成一个2880位缓冲器,两个缓冲器构成一个存储器系统。结构采用铝与多晶硅栅双层金属化,转移速度与封装密度俱比较高。每位面积仅为2.08密耳~2,整个存储器的总有效面积为30×90密耳~2。
IBM (International Business Machines Corp.) first used a charge-coupled device (CCD) to make a semiconductor memory system, bringing the CCD process from a lab to a practical stage. According to reports, this system is a 5760-bit buffer memory, divided into six, each consisting of a series of 480-bit shift register. Each shift register consists of 10 CCD channels, followed by a 48-bit field-effect transistor refresh amplifier. Six shift registers are cascaded to form a 2880-bit buffer, and two buffers form a memory system. The structure uses aluminum and polysilicon gate double-layer metallization, transfer speed and packaging density are relatively high. Each area is only 2.08 mils ~ 2, the total effective area of the memory is 30 * 90 mils ~ 2.