In的掺杂对化学水浴沉积SnS薄膜电阻率的影响

• 作 者: 葛艳辉 郭余英 史伟民 邱永华 魏光普
• 机 构: School of Materials Science and Engineering, Shanghai University, Shanghai 200072, P. R. China
• 出 处: 上海大学学报（英文版）
• 发表日期: 2007年4期
• 关键词: tin sulfide chemical bath deposition doping.

SnS and SnS:In films were deposited onto glass substrates by chemical bath technique. The structure and surface morphology of the SnS:In films were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively.Energy dispersive spectroscopy (EDS) showed the existence of In in the films. The undoped SnS film exhibited a rather high resistivity and InCl3 could reduce the resistivity of these films by two orders approximately. The band gaps of the SnS and SnS:In films were evaluated from the optical transmission spectra.