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三、硅中氧的热沉淀理论硅中氧的热沉淀行为实质上是固溶体中固态-固态相变的一种形式,它可用固体内一个新固相的成核和生长特性来描述。(一)固溶体内的成核与核的生长固溶体内一个新固相的成核有二种不同的形式:a.均匀成核,它在溶质原子位置上成核;b.异质成核,在固溶体内的结构缺陷(如位错、晶粒边界或堆垛层错等)位
THE THERMAL PRECIPITATION OF OXYGEN IN SILICON The thermal precipitation of oxygen in silicon is essentially a form of solid-solid transformation in solid solution that can be characterized by the nucleation and growth characteristics of a new solid phase in the solid. (A) Nucleation and Nucleation in Solid Solution There are two different forms of nucleation of a new solid phase in a solid solution: a. Uniform nucleation, which nucleates at the solute atoms; b. Heterogeneous nucleation, Structural defects in the solid solution (such as dislocations, grain boundaries or stacking faults, etc.)