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虽然通常的FET在求得毫米波性能方面已进行了很多细致的工作,但在满足振荡频率越来越高的工作要求方面,现有的设计是无能为力的。一种完全不同的FET结构,即栅-源对置FET(OGST)的出现,有可能突破现有设计的频率极限。这种新型晶体管结构是将栅和源放置在薄导电沟道的相对的两边。漏则配置在沟道的相对两端,但在晶体管的输出处,它们是电学连接在一起的。这种设计与通常FET相比,有一定的优点:
While typical FETs have done a great deal of detail in obtaining millimeter-wave performance, existing designs are powerless to meet the increasingly high operating requirements of oscillating frequencies. A completely different FET structure, the emergence of a gate-source opposed FET (OGST), has the potential to break the frequency limits of existing designs. This new transistor structure places the gate and the source on opposite sides of the thin conductive channel. The drain is then placed at the opposite ends of the channel, but at the output of the transistor they are electrically connected together. This design has some advantages over regular FETs: