Stability and Leakage Analysis of a Novel PP Based 9T SRAM Cell Using N Curve at Deep Submicron Tech

• 作 者: Shilpi Birla Rakesh Kumar Sing
• 机 构: 不详
• 出 处: 电路与系统(英文)
• 发表日期: 2011年4期
• 关键词: N CURVE SCALING SVNM (Static Voltage Noise Margin) LEAKAGE Power 9T SRAM Cell N

Due to continuous scaling of CMOS, stability is a prime concerned for CMOS SRAM memory cells. As scaling will increase the packing density but at the same time it is affecting the stability which leads to write failures and read disturbs of the convention