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对形成室温单电子器件的典型串联双隧道结结构模型利用求解含时薛定谔方程计算了其隧穿电流与偏压的关系 .对 Cd S纳米粒子自组装体系在室温下的 I- V特性进行了计算机模拟 ,结果与实验符合得较好 .该方法对于进一步指导纳米电子器件的实验及其原型化有重要意义
The relationship between the tunneling current and bias voltage was calculated by solving the time-dependent Schr (o) dinger equation for a typical tandem dual-tunnel junction model of single-electron-temperature devices. The I-V characteristics of self-assembled CdS nanoparticles at room temperature Computer simulation, the result is in good agreement with the experiment.The method is of great significance to further guide the experiment and prototyping of nanoelectronic devices