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多层多孔硅是采用交替变化脉冲腐蚀电流密度的方法制成的多孔度周期性变化的多孔硅结构，我们用ＡＦＭ对多层多孔硅结构的侧向解理的截面进行观测，得到了不同多孔度层及其界面处的图像。发现不同周期中相同条件下腐蚀得到的多孔硅层，其层厚随周期的不同而不同，从而限制了多孔硅发光峰半宽的缩小。对多层多孔硅的电化学腐蚀机理作了初步的探讨。
Multi-layer porous silicon is a porous silicon structure with a periodically varying porosity prepared by a method of alternately varying the pulse erosion current density. By using AFM, the cross-section of the lateral cleavage of the multi-layer porous silicon structure is observed, Level and its interface at the image. It is found that the porous silicon layer obtained by etching under the same conditions in different cycles has a different layer thickness depending on the period, thereby limiting the reduction of the half width of the porous silicon luminescence peak. The electrochemical corrosion mechanism of multi-layer porous silicon was discussed.