论文部分内容阅读
In this work, we prepared the b-Ga2O3@GaN nanowires (NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from GaN to b-Ga2O3 was confirmed by x-ray diffraction, Raman spectroscopy and transmission electron microscopy. The effect of the oxidation temperature and time on the oxidation degree of GaN NWs was investigated systematically. The oxidation rate of GaN NWs was estimated at different temperatures.