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利用电子束光刻技术制备了200nm栅长GaAs基T型栅InAl As/InGaAs MHEMT器件.该GaAs基MHEMT器件具有优越的直流、高频和功率性能,跨导、饱和漏电流密度、阈值电压、电流增益截止频率和最大振荡频率分别达到510mS/mm,605mA/mm,-1.8V,138GHz和78GHz.在8GHz下,输入功率为-0.88(2.11)dBm时,输出功率、增益、PAE、输出功率密度分别为14.05(13.79)dBm,14.9(11.68)dB,67.74(75.1)%,254(239)mW/mm,为进一步研究高性能GaAs基MHEMT功率器件奠定了基础.
A 200nm gate-length GaAs-based T-gate InAlAs / InGaAs MHEMT device was fabricated by electron beam lithography. The GaAs-based MHEMT device has excellent DC, high frequency and power performance, transconductance, saturated drain current density, threshold voltage, The current gain cut-off frequency and maximum oscillation frequency are 510mS / mm, 605mA / mm, -1.8V, 138GHz and 78GHz respectively. The output power, gain, PAE, output power at 8GHz with input power of -0.88 (2.11) dBm The density is 14.05 (13.79) dBm, 14.9 (11.68) dB, 67.74 (75.1)% and 254 (239) mW / mm, respectively, which lays the foundation for further research on high performance GaAs based MHEMT power devices.