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波长为650～660nm的Ga_(1-x)Al_xAs红光二极管,由于在室外显示、交叉路口信号灯及作为塑料光纤通信的光源等方面的新应用而得到发展。这是因为该二极管亮度高,发射波长正好与塑料纤维低损耗区的波长相符。本文报导GaAlAs红光二极管由于表面氧化作用引起的衰退并提出其预防方法。
Ga_ (1-x) Al_xAs red light diodes with a wavelength of 650-660 nm have been developed due to new applications in outdoor displays, traffic lights at intersections, and as light sources for plastic optical fiber communication. This is because the diode has a high brightness and the emission wavelength corresponds exactly to the wavelength of the low loss zone of the plastic fiber. This article reports the degradation of GaAlAs red light diodes due to surface oxidation and proposes a method of prevention.