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使用高真空电子束蒸发在p型Si(1 0 0 )衬底上制备了高kHfO2 薄膜 .俄歇电子能谱证实薄膜组分符合化学配比 ;x射线衍射测量表明刚沉积的薄膜是近非晶的 ,高温退火后发生部分晶化 ;原子力显微镜和扫描电子显微镜检测显示在高温退火前后薄膜均具有相当平整的表面 ,表明薄膜具有优良的热稳定性 ;椭偏测得在 6 0 0nm处薄膜折射率为 2 0 9;电容 电压测试得到的薄膜介电常数为 1 9.这些特性表明高真空电子束蒸发是一种很有希望的制备作为栅介质的HfO2 薄膜的方法
High-kHfO2 thin films were deposited on p-type Si (100) substrates using high vacuum electron beam evaporation. Auger electron spectroscopy confirmed that the thin films were in chemical composition; x-ray diffraction measurements showed that the films deposited were near- Crystal and high temperature annealing partial crystallization; atomic force microscopy and scanning electron microscopy showed that the film before and after annealing at high temperature have a relatively flat surface, indicating that the film has excellent thermal stability; ellipsometry was measured at 600 nm film A refractive index of 2 0 9, and a capacitance-voltage test resulting in a dielectric constant of 1 9. These characteristics indicate that high-vacuum electron-beam evaporation is a promising method of preparing a HfO2 thin film as a gate dielectric