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在1988年国际固体器件和材料会议上,日本东京工学院报导了用GaAs/(Ca,Sr)F_2/CaF2/Si制作MESFET。具体过程为;Si(100)片化学清洗并在UHF容器830℃加热30分,在清洁衬底上550℃下外延生长200nm厚的CaF_2,再在CaF_2层上500℃下生长100nm厚的Ca_xSr_(1-x)F_2(x=0.5)层,然后用MBE生长GaAs层。生长时使用二次生长法(450～580℃),即生长1.3μm厚的非掺杂缓冲层和0.2μm厚的掺Si有源层。在完成了材料生长后用通常工艺
At the 1988 International Solid-State Devices and Materials Conference, Tokyo Institute of Technology in Japan reported MESFET fabrication with GaAs / (Ca, Sr) F 2 / CaF 2 / Si. The specific process is as follows: the Si (100) chip is chemically cleaned and heated in a UHF container at 830 ° C. for 30 minutes to epitaxially grow 200 nm thick CaF 2 at 550 ° C. on the clean substrate, and then grow a 100 nm thick Ca x S sc on the CaF 2 layer at 500 ° C. 1-x) F_2 (x = 0.5) layer, and then growing the GaAs layer with MBE. The growth was performed using a secondary growth method (450 to 580 ° C.), that is, a 1.3 μm-thick undoped buffer layer and a 0.2 μm-thick Si-doped active layer were grown. After the completion of the material growth with the usual process