High performance of low voltage controlled ring oscillator with reverse body bias technology

• 机 构: Electronics and Communication Department, ITM University, Gwalior 474001, India
• 出 处: 中国光电子学前沿(英文版)
• 发表日期: 2013年3期
• 关键词: voltage controlled oscillator (VCO) leakagepower active power oscillation freque

In complementary metal oxide semiconductor (CMOS) nanoscalc technology, power dissipation is becoming important metric. In this work low leakage voltage controlled ring oscillator circuit system was proposed for critical communication systems with high oscillation frequency. An ideal approach has been presented with substrate biasing technique for reduction of power consumption. The simulation have been completed using cadence virtuoso 45 nm standard CMOS technology at room temperature 27~C with supply voltage Vc~d = 0.7 V. The simulation results suggest that voltage controlled ring oscillator has characterized with efficient low power voltage controlled oscillator (VCO) in term of minimum leakage power (1.23 nW) and maximum oscilla- tion frequency (4.76 GHz) with joint positive channel metal oxide semiconductor and negative channel metal oxide semiconductor (PMOS and NMOS) reverse sub- strate bias technique. PMOS, NMOS and joint reverse body bias techniques have been compared in the presented work.