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本文研究了热处理对高压液封法生长的掺Sn的、掺s的和未掺杂的磷化铟的光致发光光谱的影响.掺Sn的InP在热处理温度高于500℃时出现了1.36eV 发光峰,同样热处理条件下,未掺杂的与掺S的InP材料不存在这个发光峰.研究表明,热处理掺Sn的InP中1.36eV发光峰所对应的发光中心很可能是Sn和V_p构成的复合体.
The effect of heat treatment on the photoluminescence (PL) spectra of Sn-doped, undoped and indium-doped indium phosphides grown by high pressure liquid-sealing was investigated in this paper.The InP doped with Sn appeared 1.36 eV when the heat treatment temperature was above 500 ℃ Luminescence peak, the same heat treatment conditions, the undoped and S doped InP material does not exist in this luminescence peak.Studies show that heat treatment of Sn doped InP 1.36eV luminescence peak corresponds to the luminescence center is likely to be Sn and V_p composition Complex.