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在大气压力和500℃低温下,生长了优质MOCVD外延层。在600℃以下,生长速率受AsH_3热分解减少的限制。测量了Se高掺杂GaAs层的霍尔迁移率,其数值随着生长温度的降低而减少。一些新颖的半导体器件结构如热电子器件要求很陡峭的界面及很薄的外延层。
At atmospheric pressure and 500 ℃ low temperature, the growth of high-quality MOCVD epitaxial layer. Below 600 ° C, the growth rate is limited by the reduction of AsH_3 thermal decomposition. The Hall mobility of the highly doped GaAs layer was measured and its value decreased as the growth temperature decreased. Some novel semiconductor device structures such as thermionic devices require very steep interfaces and very thin epitaxial layers.