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结合表面缺陷半无限光子晶体Tamm态与多孔硅光学传感机理,在光子晶体表面缺陷腔中引入多孔硅,并利用其高效的承载机制,提出基于多孔硅表面缺陷光子晶体Tamm态的折射率传感结构.在半无限光子晶体中缺陷腔与原来的周期性分层介质结构的界面上存在Tamm态,通过入射角度调制使其在缺陷腔中实现多次全反射,并在缺陷腔中加入吸收介质,使谐振波长在缺陷腔中完成衰荡,从而在反射谱中得到缺陷峰;调整光子晶体参数,使缺陷峰的半高全宽得到优化,提高其品质因数(Q值);在此基础上,根据Goos-H?nchen相位移与谐振波长的关系,建立由待测样本折射率改变所导致的多孔硅表面吸附层有效折射率变化与缺陷峰值波长漂移之间的关系模型,并分析其折射率传感特性.结果表明,此生物传感结构Q值为1429,灵敏度为546.67 nm/RIU,证明了该传感结构的有效性,可为高Q值和高灵敏度折射率传感器的设计提供一定的理论参考.
Combining the Tammin states of porous semi-infinite photonic crystals with the optical sensing mechanism of porous silicon, porous silicon was introduced into the defect cavity of the photonic crystal surface. Based on the highly efficient loading mechanism, the refractive index of the photonic crystals based on the Tamm state of porous silicon surface defects In the semi-infinite photonic crystal, the defect state exists in the interface with the original periodic layered dielectric structure. The Tamm state exists at the interface of the defect cavity by the incident angle modulation, and the absorption in the defect cavity Medium so that the resonance wavelength finishes ringing in the defect cavity to obtain a defect peak in the reflection spectrum; the photonic crystal parameter is adjusted so that the full width at half maximum of the defect peak is optimized and the quality factor (Q value) is improved; on this basis, According to the relationship between the phase shift and resonance wavelength of Goos-Hönchen, a model of the relationship between the change of effective refractive index of porous silicon surface adsorbed layer and the peak wavelength drift caused by the change of refractive index of sample is established. The refractive index The results show that the Q value of this biosensor is 1429 and the sensitivity is 546.67 nm / RIU, which proves the effectiveness of this sensing structure for high Q value and high sensitivity fold Rate sensor designed to provide a theoretical reference.