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在SMF-800石墨第一壁化学腐蚀温度特性的实验研究基础上,进一步测试了G3石墨,SMF-800高纯石墨和硼化石墨,以及SiC镀层等在1.3μA/3keV氘束轰击下化学腐蚀的温度特性。从中优选出C_2B_(10)H_(12)-氦辉光放电法制取的SMF-800石墨硼化层,它具有最佳的抗化学腐蚀性能。其CD_4产额较SMF-800高纯石墨的降低一个量级以上,CD_4产额峰值温度下移至650K附近。用小角度转动样品法,初步观察了氘束轰击下石墨释放CD_4的角分布特性,对托卡马克先进偏滤器实验中建立CD_4辐射区的定位及其控制等可行性进行了探索。
Based on the experimental study on the temperature characteristics of the chemical etching on the first wall of SMF-800 graphite, the chemical corrosion of G3 graphite, SMF-800 high purity graphite and graphite boride, SiC coating and so on under the deuterium beam bombardment of 1.3μA / 3keV The temperature characteristics. The SMB-800 graphitic boronization layer prepared by C_2B_ (10) H_ (12) -He glow discharge method is optimized, which has the best chemical corrosion resistance. The yield of CD_4 was lower than that of SMF-800 high purity graphite by more than one order of magnitude, and the peak value of CD_4 output was reduced to around 650K. The angle distribution characteristics of CD_4 released by deuterium beam bombardment and the feasibility of establishing the CD_4 radiation zone in the advanced tokamak filter experiment were probed with the small-angle rotation sample method.