,A Continuous Current Model of Accumulation Mode (Junctionless) Cylindrical Surrounding-Gate Nanowir

• 作 者: JIN Xiao-Shi LIU Xi KWON Hyuck-In LEE Jong-Ho
• 机 构: School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110023“,”
• 出 处: 中国物理快报（英文版）
• 发表日期: 2013年3期

A continuous current model of accumulation mode or so-called junctionless (JL) cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors (MOSFETs) is proposed.The model is based on an approximated solution of Poissons equation considering both body doping and mobile charge concentrations.It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement.Without any empirical fitting parameters,the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.