Owing to its higher electron and hole mobilities compared to Si,Germanium(Ge)is considered as one of the promising materials in future microelectronic devic
An overview of the properties and potentials of strained silicon as high mobility material for MOSFETs and Tunnel-FETs will be presented.The exploitation of str
As CMOS continues to approach the physical limits of silicon,one possible solution is to introduce a high mobility channel for devices beyond the 10 nm technolo
The enthusiasm towards flexible single crystal silicon electronics and photonics is stimulated by a natural quandary: the well-established integrated electr