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The luminescence mechanisms has been investigated for the n-type GaN thin films grown by metalorganic chemical vapor deposition (MOCVD) technique on sapphire substrates with GaN buffer layers by photoluminescence (PL) spectra.The temperature-dependent PL measurements exhibited the existence of the neutral donor-bound exciton (D0X) and free excitons (FE) emission with its phonon replicas and a weak yellow luminescence peak (YL) at low temperature,and the intensity of all peaks decreased with increasing temperature.