Growth Interface of In-doped CdMnTe from Te solution with Vertical Bridgman Method under ACRT techni

来源 :2012 Postdoctoral Symposium of China on Materials Science & | 被引量 : 0次 | 上传用户:xiatiandegushi1989
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
  CdMnTe (CMT) crystals have been grown from Te solution with a vertical Bridgman method under accelerated crucible rotation (ACRT) technique.Ingot in the diameter of 30 mm and length of 60 mm was obtained with growth rate of 3mrn/day.As-grown CMT had fewer twins along the radial and longitudinal direction of the ingot.IR microscope showed that the microscopic shape of growth interface was non-uniform and irregular, which is responsible for higher Te inclusions density.The laser confocal microscope revealed that the random deposition of Te phase in the Te-rich CMT region had irregular shape and voids.In short, Te solution vertical Bridgman technique was proved to be a practical way to effectively reduce the twins in CMT crystal.
其他文献
The differential thermal analysis (DSC) with slow scanning rate (SSDSC used as abbreviation for slow scanning DSC) can play an important role for the precise determination of phase diagram.The importa
Relaxor-type ferroelectric perovskites (Ba,La)(Mg,Nb)O3 (BLMN) ceramics have been synthesized from oxides by sintering in airs using a conventional mixed oxide process.From the XRD patterns, it is fou
Modification of the commercial polymer electrolyte membrane (PEM) Nafion(R)117 by-ray irradiation, to produce an improved proton exchange membrane for direct methanol fuel cells (DMFCs) is described.T
Lead-free K0.5Na0.5NbO3-LiSbO3-BiFeO3 ceramics were prepared by traditional ceramic processing.The "soft" and "hard" doping characteristics of the ceramics were investigated by impedance-frequency spe
Lead-free piezoelectric ceramics (1-x)(K0.5Na0.5)NbO3-xLiBiO3 [(1-x)KNN-xLB] (x =0, 0.0005, 0.002, 0.004, 0.006, 0.008, 0.01) were prepared by the traditional solid state reaction and the microstructu
Inductively coupled plasma (ICP) deep etching characteristics of GaN materials with an etching depth up to 7 μm is investigated.The tapered isolation trench is transferred into GaN epitaxial layer usi
会议
0.7BaO·0.3SrO·0.3Nb2O5·0.7TiO2 (SBN/BST) composite ceramics were fabricated using a Powder-Sol (P-S) method with Nb2O5 fine powder suspended in the barium strontium titanate (abbreviated as BST) sol s
Many defects in semi-insulating (SI) cadmium zinc telluride (Cdl-xZnxTe or CZT) ingots grown by the melting methods act as trapping centres to introduce deep levels in the band gap, which have strong
A new ductile fracture initiation criterion and the implement model for simulating automatic crack propagation in sheet-metal blanking processes are presented.Several ductile fracture criteria in shea
On the basis of the demand motivation factors for the agricultural product logistics system information platform in the era of internet of things, the author analyzes formation of the virtual supply c