【摘 要】
：
Many defects in semi-insulating (SI) cadmium zinc telluride (Cdl-xZnxTe or CZT) ingots grown by the melting methods act as trapping centres to introduce deep levels in the band gap, which have strong
【出 处】
：
2012 Postdoctoral Symposium of China on Materials Science &
论文部分内容阅读
Many defects in semi-insulating (SI) cadmium zinc telluride (Cdl-xZnxTe or CZT) ingots grown by the melting methods act as trapping centres to introduce deep levels in the band gap, which have strong effects on CZT detection properties.In this study, the initial rise method and the simultaneous multiple peaks analysis (SIMPA) method are introduced to characterize trap levels in SI-Cd0.9Zn0.1Te:In by thermally stimulated current (TSC) spectroscopy, respectively.It results that the former is suitable for evaluating the shallow trap levels in the low-temperature ranges of TSC measurement, but there are larger errors in determining the values of deep traps with the interference of overlapping peaks.And the latter demonstrates a better performance in resolving the overlapping peaks simultaneously for a full characterization of trap levels.On this basis, a theoretical fit composed of ten trap levels and the deep donor level EDD which dominates the dark current in SI-CZT:In has been achieved.Furthermore, the reason of high resistivity in CZT:In is explained by the relationship of the EDD level and the Fermi level.
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