Investigation of the Chemical Reaction on the Etched HfO2 Thin Film Surface by Using a High Density

来源 :The 8th Asian-European International Conference on Plasma Su | 被引量 : 0次 | 上传用户：sadlyiwas

【作者】

：

Pil-Seung Kang Jong-Chang Woo Young-Hee Joo Chang-Il Kim

【机构】

：

School of Electrical and Electronic Engineering,Chung-Ang University,221,Heukseok-Dong,Dongjak-Gu,Se

【出处】

：

The 8th Asian-European International Conference on Plasma Su

【发表日期】

：

2011年1期

【关键词】

：

HfO2 X-ray photoelectron spectroscopy High density plasma

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Investigation of the Chemical Reaction on the Etched HfO2 Thin Film Surface by Using a High Density

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