Direct observation of biexciton emission for single quantum dots encased in N-type semiconductor nan

来源 :2016第二届有机光电材料与器件国际会议 | 被引量 : 0次 | 上传用户：zjie16

【摘要】

：

Encasing single near-infrared emitting CdSeTe/ZnS core/shell quantum dots(QDs)in N-type semiconductor indium tin oxide(ITO)nanoparticles,an enhanced biexciton(BX)emission can be directly observed.The

【作者】

：

Guofeng Zhang Zhijie Li Bin Li Liantuan Xiao Suotang Jia

【机构】

：

State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy,Sh

【出处】

：

2016第二届有机光电材料与器件国际会议

【发表日期】

：

2016年5期

【关键词】

：

quantum dots biexciton quantum yield correlation function ITO nanoparticles

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　　Encasing single near-infrared emitting CdSeTe/ZnS core/shell quantum dots(QDs)in N-type semiconductor indium tin oxide(ITO)nanoparticles,an enhanced biexciton(BX)emission can be directly observed.The surrounding ITO nanoparticles can increase dielectric screening of single QDs to reduce the Coulomb interactions between excitons,thus suppressing the nonradiative Auger recombination of BX.

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Direct observation of biexciton emission for single quantum dots encased in N-type semiconductor nan

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