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近年来,基于硅的传统CMOS器件和电路在运行速度及柔性便携等指标上开始落后于人们的需求和丁程师们的设计目标.因此,在石墨烯之外的具有禁带宽度的新型二维材料如过渡金属二硫系化物包括二硫化钼MoS2等.
高性能二维器件的电学特性
【摘 要】
：
近年来,基于硅的传统CMOS器件和电路在运行速度及柔性便携等指标上开始落后于人们的需求和丁程师们的设计目标.因此,在石墨烯之外的具有禁带宽度的新型二维材料如过渡金属二硫系化物包括二硫化钼MoS2等.
【机 构】
：
华中科技大学
【出 处】
：
2015中国国际功能材料科技与产业高层论坛
【发表日期】
：
2015年2期
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