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In this paper,we present an approach to design and analysis of a two-junction III-V GalnP nanowire array(NWA)/Si thin film solar cell based on a combined optical and electrical stimulation method.Using 3D finite-difference time-domain method,we theoretically investigate arrays of NWA to determine the optimal geometry for the trade-offbetween NWA and Si film light absorption.Further,to analyze the optical absorption and reflection of the two-junction cell,its found that NWA not only have super absorption characteristic due to light trapping effect,but also act as an efficient anti-reflection coatings for bottom Si cell.To explore the J-V characteristics of the proposed optimal geometry the cell obtained by optical section,the optical generation profiles under AM 1.5G illumination are incorporated into electrical model.Taking into account the NWA surface recombination and Shockly-Reed-Hall (SRH) having a great influence on the external quantum efficiency (EQE),we find that the core-shell NWA and Si thin film structure can easily obtained electrical current matching with the optimal geometry.This model indicated that well passivated NWA with surface recombination velocity of 7× 104(mn),s-2 could also exhibit 27.06%efficiency.