Multiscale modeling of defect-related phenomena in silicon crystals

来源 :The 7th Sino-US Conference of Chemical Engineering(第7届中美化学工程 | 被引量 : 0次 | 上传用户：fsb820101

【摘要】

：

Continuum process modeling of point defect and impurity aggregation during silicon crystal growth and wafer annealing has led to significant contributions toward understanding and improvement of indus

【作者】

：

Talid Sinno

【机构】

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Department of Chemical and Biomolecular Engineering,University of Pennsylvania,Philadelphia, PA 1910

【出处】

：

The 7th Sino-US Conference of Chemical Engineering(第7届中美化学工程

【发表日期】

：

2013年11期

【关键词】

：

Multiscale modeling and simulation microstructure evolution crystalline silicon

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Multiscale modeling of defect-related phenomena in silicon crystals

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