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The advantages of Na doping for Zn1-xMgxO thin films and electroluminescence of the p-Zn1-xMgxO/n-Zn
【机 构】
:
Department of Materials Science and Engineering,State Key Laboratory of Silicon Materials,Zhejiang U
【出 处】
:
第六届国际氧化锌及相关材料研讨会
【发表日期】
:
2010年4期
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