论文部分内容阅读
Preparation and characterization of a bottom-gate field emission triode based on laterally-grown ZnO
【机 构】
：
Institute of Microelectronics,Department of Electrical Engineering,National Cheng Kung University,Ta
【出 处】
：
第六届国际氧化锌及相关材料研讨会
【发表日期】
：
2010年4期
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