Si-based Film Deposition in Dielectric barrier discharge plasma enhanced chemical vapor deposition s

来源 :The 6th International Symposium on Plasma Nanosciences-Progr | 被引量 : 0次 | 上传用户：cxycsnf

【摘要】

：

【作者】

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Jinhai Niu Li Dong Peng Liao Yunzhu Chen Dongping Liu

【机构】

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Liaoning Key Lab of Optoelectronic Films & Materials,School of Physics and Materials Engineering,Dal

【出处】

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The 6th International Symposium on Plasma Nanosciences-Progr

【发表日期】

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2015年3期

【关键词】

：

SiO2 film DBD-PECVD Precursor composition Thickness Refractive index

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　　Dielectric barrier discharge plasma enhanced chemical vapor deposition system(DBD-PECVD)with substrate temperature controlling between room temperature and 300 ℃ was established and SiOx film was deposited using tetraethyl orthosilicate(TEOS)and oxygen gas mixtures(or with N2 and Ar addition)as the precursors.

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Si-based Film Deposition in Dielectric barrier discharge plasma enhanced chemical vapor deposition s

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