【摘 要】
：
Silicon carbide (SiC) is a promising material in many fields of catalysis, high-power and high-frequency electronics, photoelectric, anti-radiation, and wav
【机 构】
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National Key Laboratory of Science and Technology on Advanced Ceramic Fibers and Composites, Nationa
【出 处】
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2016’中国溶胶-凝胶学术研讨会暨国际论坛
论文部分内容阅读
Silicon carbide (SiC) is a promising material in many fields of catalysis, high-power and high-frequency electronics, photoelectric, anti-radiation, and wave-absorbing devices, due to high hardness, good thermal shock resistance, high thermal conductivity and stability, low thermal expansion coefficient, superior chemical inertness and large band gap.Development of appropriate methods to synthesize SiC ceramics remains topical.In this paper, highly dispersed silicon carbide powders are synthesized by polycondensation and carbothermal reduction reactions with tetraethoxysilane and phenolic resin as starting materials.Investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscope (FE-SEM) and the nitrogen adsorption-desorption isotherm measurements, the synthesized SiC powders showed a small average crystallite size (~100 nm) and high specific surfaces areas (~210 nm).Besides, mechanism for formation of SiC ceramic was analyzed.
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