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根据Ag2Se-Ga2Se3赝二元相图,对AgGa1-xInxSe2按同成分点配料,通过机械和温度振荡的方法合成出AgGa1-xInxSe2多晶材料.并对合成的多晶材料进行了XRD测试,与直接法合成的AgGa1-xInxSe多晶材料进行对比.结果表明,改进工艺后合成的AgGa1-xInxSe2多晶材料的图谱与标准PDF卡片相符,表明其是高纯单相的AgGa1-xInxSe2多晶材料.用新方法合成的AgGa1-xInxSe2多晶材料进行单晶生长,获得了完整的AgGa1-xInxSe2单晶体.实验结果表明,机械和温度振荡法是合成高质量AgGa1-xInxSe2多晶材料的一种有效方法.
According to the Ag2Se-Ga2Se3 pseudomorphic binary phase diagram, AgGa1-xInxSe2 is prepared by mixing AgGa1-xInxSe2 with the same ingredients and mechanically and temperature-oscillating to synthesize AgGa1-xInxSe2 polycrystalline materials. The synthesized polycrystalline materials were characterized by XRD, The results show that the AgGa1-xInxSe2 polycrystalline material synthesized by the improved process is in agreement with the standard PDF card, indicating that it is a high purity single-phase AgGa1-xInxSe2 polycrystalline material. The AgGa1-xInxSe2 polycrystalline materials synthesized by the new method are single crystal grown and the complete AgGa1-xInxSe2 single crystal is obtained.The experimental results show that the mechanical and temperature oscillation methods are an effective method for synthesizing high quality AgGa1-xInxSe2 polycrystalline materials.