【摘 要】
：
SnO2 is a typical wide band gap (Eg =3.6eV) n-typed semiconductor which can be widely used in solar cells, electric materials and gas materials and other fi
【机 构】
：
State Key Laboratory of Chemical Resource Engineering, Beijing Key Laboratory of Electrochemical Pro
【出 处】
：
2013 International Symposium on Integrated Molecular / Mater
论文部分内容阅读
SnO2 is a typical wide band gap (Eg =3.6eV) n-typed semiconductor which can be widely used in solar cells, electric materials and gas materials and other fields because of its attractive characteristics such as high transparency to visible light, ultraviolet absorption coefficient, low resistivity, environment-friendly and acid and alkali resistantability at room temperature.Due to the advantages such as low reaction temperature, simple test equipment,control easily, electrodeposition is applied to the preparation of SnO2.However, the produced SnO2 films mainly composed of spherical particles, which is not conducive to electronic conduction, and limits the solar cell efficiency.Therefore, preparing one-dimensional structures of SnO2 thin film by a simple method is much concerned.
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