Electron Transport Properties of Topological Insulator Thin Films New Insight from Parallel Magnetic

来源 :2013年纳米、表面和Graphene科学与技术全国会议 | 被引量 : 0次 | 上传用户：alexhome

【摘要】

：

We report our latest progress in study of magnetotransport properties of topological insulator Bi2Se3 and (Bi1-xSbx)2Te3 thin films.Implications on the quality

【作者】

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Yongqing Li

【机构】

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InstituteofPhysicsandNationalLaboratoryforCondensedMatterPhysics,ChineseAcademyofSciences,Beijing100

【出处】

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2013年纳米、表面和Graphene科学与技术全国会议

【发表日期】

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2013年12期

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We report our latest progress in study of magnetotransport properties of topological insulator Bi2Se3 and (Bi1-xSbx)2Te3 thin films.Implications on the quality of the thin films will be discussed based on electron transport measurements of the films with strong gate tunability in both perpendicular and parallel magnetic fields.

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Electron Transport Properties of Topological Insulator Thin Films New Insight from Parallel Magnetic

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