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5. Growth and Material Properties of InyGa1-yAs1-xBix Thin Films using Gas Source Molecular Beam Epitax

Growth and Material Properties of InyGa1-yAs1-xBix Thin Films using Gas Source Molecular Beam Epitax

来源 :第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain | 被引量 : 0次 | 上传用户：H07081820607

【作 者】

：

Shuxing Zhou Ming Qi Likun Ai Anhuai Xu Shumin Wang 

【机 构】

：

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and

【出 处】

：

第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain

【发表日期】

：

2016年11期

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