Growth and Characterization of Molecular Beam Epitaxy Grown ErAs:GaBiAs and Ⅲ-Ⅴ Bismuth Containing Q - 论文文献免费下载 - 皮皮文库

Growth and Characterization of Molecular Beam Epitaxy Grown ErAs:GaBiAs and Ⅲ-Ⅴ Bismuth Containing Q

来源 :第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain | 被引量 : 0次 | 上传用户：ailing770

【作者】

：

Jing Zhang Cory C.Bom berger Yuejing Wang Joshua M.O Zide

【机构】

：

Chemistry and Biochemistry, University of Delaware, Newark, Delaware, USA

【出处】

：

第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain

【发表日期】

：

2016年11期

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