【摘 要】
：
A major limitation of the silicon-on-insulator(SOI)based nanophotonic integrated circuit technology platform is the fact that it cannot be used for applications operating at shorter wavelengths in the
【机 构】
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AIT Austrian Institute of Technology GmbH ams AG
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
A major limitation of the silicon-on-insulator(SOI)based nanophotonic integrated circuit technology platform is the fact that it cannot be used for applications operating at shorter wavelengths in the visible and In this wavelength region,silicon nitride waveguides(Si3N4)offer an attractive alternative.So far,low-pressure chemical vapor deposition(LPCVD)has been the method of choice to fabricate Si3N4 waveguides.However,due to the high process temperature LPCVD is not compatible with monolithic co-integration with photodiodes and electronic read-out circuitry,which significantly limits the level of attainable photonic functionality.Moreover,due to strain issues the layer thickness is practically limited to In order to overcome these limitations,a few research groups have recently started to employ CMOS-compatible Si3N4 waveguides fabricated by low-temperature plasma enhanced chemical vapor deposition(PECVD).In this work,we present our developments on low-loss Si3N4 waveguides fabricated by means of PECVD for the SiO2 lower cladding and the Si3N4 waveguide layer,photolithographic patterning,and reactive ion etching.As top cladding we used the photopatternable resist SU-8.
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