【摘 要】
：
The nonradiative decay of plasmons results in hot electrons,which can transfer across the Schottky barrier of the metal-semiconductor interface.The photoexcited hot electrons contribute to the current
【机 构】
：
Southeast University
【出 处】
：
The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
The nonradiative decay of plasmons results in hot electrons,which can transfer across the Schottky barrier of the metal-semiconductor interface.The photoexcited hot electrons contribute to the current detected.[1] However,the quantum efficiency of hot electron devices remains low due to the poor electron injection or the low optical absorption.Various nanostructure devices have been extensively explored for this purpose,including metal gratings [2],metal antennas,optical microcavitys,and others.However,these elaborated nanostructures require very expensive photolithography even electron beam lithography.In this work,we study the hot electron photoelectric conversion properties based on n-type doping silicon pyramid array nanostructures.The pyramidally shaped substrate of silicon is realized with the anisotropic chemical wet etching.The plasmonic ultrathin gold film,of which the thickness is smaller than the hot electrons diffusion length,is deposited on the silicon pyramid substrate to realize the Schottky junction.A transparent electrode of indium doped tin-oxide(ITO)is magnetron sputtered as the top contact.The unique pyramid shape creates the gradually changed effective refractive index and greatly reduces the reflectance of the surface.The window and the bandwidth of the proposed photo-detecting device are limited by the height of the Schottky barrier,instead of the bandgap of the semiconductor used.This allows the silicon(1.12 eV)-based plasmonic devices to detect the near-infrared incidence.Finite-different time-domain simulations are adopted to optimize the proposed structure and analyze the angular dependency and the polarization sensitivity.This device is done without using any high resolution lithography and is compatible with the mature CMOS technology.These internal photoemission Schottky detectors could potentially open a pathway for enhancing the efficiency of hot electrons photodetection.
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