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Ternary InGaAs nanowires have recently attracted extensive attention due to their superior electron mobility as well as the ability to tune the band gap for technological applications ranging from high-performance electronics to high-efficiency photovoltaics.However, due to the difficulties in synthesis, there are still considerable challenges to assess the correlation among electrical, optical, and structural properties of this material system across the entire range of compositions.Here, utilizing a simple two-step growth method, we demonstrate the successful synthesis of composition and band gap tunable InxGa1-xAs alloy nanowires (average diameter =25 to 30 nm) by manipulating the source powder mixture ratio and growth parameters.